B. Hamilton
AuthID: R-00F-SK0
1
TÃTULO: The trivacancy and trivacancy-oxygen family of defects in silicon
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLICAÇÃO: 2014, FONTE: 15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, VOLUME: 205-206
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLICAÇÃO: 2014, FONTE: 15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, VOLUME: 205-206
2
TÃTULO: Titanium in silicon: Lattice positions and electronic properties Full Text
AUTORES: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 104, NÚMERO: 15
AUTORES: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 104, NÚMERO: 15
3
TÃTULO: Electronic and dynamical properties of the silicon trivacancy
AUTORES: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2012, FONTE: PHYSICAL REVIEW B, VOLUME: 86, NÚMERO: 17
AUTORES: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2012, FONTE: PHYSICAL REVIEW B, VOLUME: 86, NÚMERO: 17
4
TÃTULO: Reconfigurations and diffusion of trivacancy in silicon Full Text
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLICAÇÃO: 2012, FONTE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, NÚMERO: 15
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLICAÇÃO: 2012, FONTE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, NÚMERO: 15
5
TÃTULO: The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? Full Text
AUTORES: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLICAÇÃO: 2011, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 98, NÚMERO: 18
AUTORES: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLICAÇÃO: 2011, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 98, NÚMERO: 18
6
TÃTULO: Tin-vacancy complex in germanium Full Text
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, NÚMERO: 8
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, NÚMERO: 8
7
TÃTULO: Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon Full Text
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLICAÇÃO: 2011, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, NÚMERO: 3
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLICAÇÃO: 2011, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, NÚMERO: 3
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TÃTULO: Radiation-induced defect reactions in tin-doped Ge crystals
AUTORES: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
AUTORES: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
