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151

TÃTULO: Plasma diagnostics of a PECVD system using different R.F. electrode configurations Full Text
AUTORES: Águas, H; Martins, R; Fortunato, E;
PUBLICAÇÃO: 2000, FONTE: Vacuum, VOLUME: 56, NÚMERO: 1

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152

TÃTULO: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTORES: Aguas, V. Silva, I. Ferreira, E. Fo, H;
PUBLICAÇÃO: 2000, FONTE: Philosophical Magazine B, VOLUME: 80, NÚMERO: 4

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153

TÃTULO: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTORES: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLICAÇÃO: 2000, FONTE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, NÚMERO: 4

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154

TÃTULO: Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507

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155

TÃTULO: Influence of the H-2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507

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