José Pedro de Abreu Coutinho
AuthID: R-000-8V3
71
TÃTULO: Titanium in silicon: Lattice positions and electronic properties Full Text
AUTORES: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 104, NÚMERO: 15
AUTORES: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 104, NÚMERO: 15
72
TÃTULO: Resonant Electronic Coupling Enabled by Small Molecules in Nanocrystal Solids Full Text
AUTORES: Rui N Pereira; Jose Coutinho; Sabrina Niesar; Tiago A Oliveira; Willi Aigner; Hartmut Wiggers; Mark J Rayson; Patrick R Briddon; Martin S Brandt; Martin Stutzmann;
PUBLICAÇÃO: 2014, FONTE: NANO LETTERS, VOLUME: 14, NÚMERO: 7
AUTORES: Rui N Pereira; Jose Coutinho; Sabrina Niesar; Tiago A Oliveira; Willi Aigner; Hartmut Wiggers; Mark J Rayson; Patrick R Briddon; Martin S Brandt; Martin Stutzmann;
PUBLICAÇÃO: 2014, FONTE: NANO LETTERS, VOLUME: 14, NÚMERO: 7
73
TÃTULO: Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions Full Text
AUTORES: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 105, NÚMERO: 3
AUTORES: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 105, NÚMERO: 3
74
TÃTULO: Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces Full Text
AUTORES: Zhachuk, R; Teys, S; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 105, NÚMERO: 17
AUTORES: Zhachuk, R; Teys, S; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2014, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 105, NÚMERO: 17
75
TÃTULO: Silicon and germanium nanocrystals: properties and characterization
AUTORES: Capan, I; Carvalho, A; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 5, NÚMERO: 1
AUTORES: Capan, I; Carvalho, A; Coutinho, J;
PUBLICAÇÃO: 2014, FONTE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 5, NÚMERO: 1
76
TÃTULO: Defects in germanium: Theoretical aspects
AUTORES: Carvalho, A; Coutinho, J; Jones, R;
PUBLICAÇÃO: 2012, FONTE: Germanium: Properties, Production and Applications
AUTORES: Carvalho, A; Coutinho, J; Jones, R;
PUBLICAÇÃO: 2012, FONTE: Germanium: Properties, Production and Applications
INDEXADO EM: 
Scopus
Scopus NO MEU: 
ORCID
ORCID77
TÃTULO: Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
AUTORES: Leitão, JP; Carvalho, A; Coutinho, J; Pereira, RN; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M; Lundsgaard Hansen, J; Nylandsted Larsen, A; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: Phys. Rev. B - Physical Review B, VOLUME: 84, NÚMERO: 16
AUTORES: Leitão, JP; Carvalho, A; Coutinho, J; Pereira, RN; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M; Lundsgaard Hansen, J; Nylandsted Larsen, A; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: Phys. Rev. B - Physical Review B, VOLUME: 84, NÚMERO: 16
78
TÃTULO: Radiation-induced Defect Reactions in Tin-doped Ge Crystals
AUTORES: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
AUTORES: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
INDEXADO EM: 
WOS
WOS79
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
INDEXADO EM: WOS
WOS80
TÃTULO: Bandwidth-efficient optical burst-switched networks based on traffic engineering in the wavelength domain and delayed burst scheduling
AUTORES: Pedro, J; Monteiro, P; Pires, J;
PUBLICAÇÃO: 2007, FONTE: 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 in 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007
AUTORES: Pedro, J; Monteiro, P; Pires, J;
PUBLICAÇÃO: 2007, FONTE: 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 in 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007
INDEXADO EM: Scopus
Scopus