Katharina Lorenz
AuthID: R-000-90E
101
TÃTULO: Indirect excitation of Eu3+ in GaN codoped with Mg and Eu Full Text
AUTORES: Yamaga, M; Watanabe, H; Kurahashi, M; O'Donnell, KP; Lorenz, K; Bockowski, M;
PUBLICAÇÃO: 2015, FONTE: 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) in 6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, VOLUME: 619, NÚMERO: 1
AUTORES: Yamaga, M; Watanabe, H; Kurahashi, M; O'Donnell, KP; Lorenz, K; Bockowski, M;
PUBLICAÇÃO: 2015, FONTE: 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) in 6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, VOLUME: 619, NÚMERO: 1
102
TÃTULO: Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
AUTORES: Rodrigues, J; Leitao, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2015, FONTE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 119, NÚMERO: 31
AUTORES: Rodrigues, J; Leitao, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2015, FONTE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 119, NÚMERO: 31
103
TÃTULO: Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs
AUTORES: Carvalho, D; Morales, FM; Ben, T; Garcia, R; Redondo Cubero, A; Alves, E; Lorenz, K; Edwards, PR; O'Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: MICROSCOPY AND MICROANALYSIS, VOLUME: 21, NÚMERO: 4
AUTORES: Carvalho, D; Morales, FM; Ben, T; Garcia, R; Redondo Cubero, A; Alves, E; Lorenz, K; Edwards, PR; O'Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: MICROSCOPY AND MICROANALYSIS, VOLUME: 21, NÚMERO: 4
104
TÃTULO: Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure Full Text
AUTORES: Ben Sedrine, N; Esteves, TC; Rodrigues, J; Rino, L; Correia, MR; Sequeira, MC; Neves, AJ; Alves, E; Bockowski, M; Edwards, PR; O'Donnell, KP; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2015, FONTE: SCIENTIFIC REPORTS, VOLUME: 5
AUTORES: Ben Sedrine, N; Esteves, TC; Rodrigues, J; Rino, L; Correia, MR; Sequeira, MC; Neves, AJ; Alves, E; Bockowski, M; Edwards, PR; O'Donnell, KP; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2015, FONTE: SCIENTIFIC REPORTS, VOLUME: 5
105
TÃTULO: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTORES: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: NANOTECHNOLOGY, VOLUME: 26, NÚMERO: 42
AUTORES: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: NANOTECHNOLOGY, VOLUME: 26, NÚMERO: 42
INDEXADO EM: 
Scopus 
WOS
Scopus WOS NO MEU: 
ORCID
ORCID106
TÃTULO: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTORES: Moreno-Barrado, A; Gago, R; Redondo-Cubero, A; Vázquez, L; Muñoz-García, J; Cuerno, R; Lorenz, K; Castro, M;
PUBLICAÇÃO: 2015, FONTE: EPL - EPL (Europhysics Letters), VOLUME: 109, NÚMERO: 4
AUTORES: Moreno-Barrado, A; Gago, R; Redondo-Cubero, A; Vázquez, L; Muñoz-García, J; Cuerno, R; Lorenz, K; Castro, M;
PUBLICAÇÃO: 2015, FONTE: EPL - EPL (Europhysics Letters), VOLUME: 109, NÚMERO: 4
107
TÃTULO: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTORES: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: Nanotechnology, VOLUME: 26, NÚMERO: 42
AUTORES: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: Nanotechnology, VOLUME: 26, NÚMERO: 42
108
TÃTULO: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments Full Text
AUTORES: Lopez, I; Lorenz, K; Nogales, E; Mendez, B; Piqueras, J; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 49, NÚMERO: 3
AUTORES: Lopez, I; Lorenz, K; Nogales, E; Mendez, B; Piqueras, J; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 49, NÚMERO: 3
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID109
TÃTULO: Sequential multiple-step europium ion implantation and annealing of GaN. Sequential multiple-step europium ion implantation and annealing of GaN Full Text
AUTORES: Miranda, SMC; Edwards, PR; O'Donnell, KP; Bockowski, M; Alves, E; Roqan, IS; Vantomme, A; Lorenz, K;
PUBLICAÇÃO: 2014, FONTE: E-MRS Spring Meeting / Symposium J - Semicond Nanostructures towards Elect and Optoelectron Device Applicat - IV / Symposium L - Grp III Nitrides / Symposium P - Funct Nanowires - Synth, Characterizat and Applicat in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, VOLUME: 11, NÚMERO: 2
AUTORES: Miranda, SMC; Edwards, PR; O'Donnell, KP; Bockowski, M; Alves, E; Roqan, IS; Vantomme, A; Lorenz, K;
PUBLICAÇÃO: 2014, FONTE: E-MRS Spring Meeting / Symposium J - Semicond Nanostructures towards Elect and Optoelectron Device Applicat - IV / Symposium L - Grp III Nitrides / Symposium P - Funct Nanowires - Synth, Characterizat and Applicat in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, VOLUME: 11, NÚMERO: 2
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID110
TÃTULO: Europium-doped GaN(Mg): beyond the limits of the light-emitting diode. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode Full Text
AUTORES: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E; Bockowski, M;
PUBLICAÇÃO: 2014, FONTE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, NÚMERO: 3-4
AUTORES: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E; Bockowski, M;
PUBLICAÇÃO: 2014, FONTE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, NÚMERO: 3-4
