Tomasz Wojtowicz
AuthID: R-006-W1F
1
TÃTULO: Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation Full Text
AUTORES: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, NÚMERO: 7
AUTORES: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, NÚMERO: 7
2
TÃTULO: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Full Text
AUTORES: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
AUTORES: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
3
TÃTULO: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9
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TÃTULO: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTORES: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, NÚMERO: 7
AUTORES: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, NÚMERO: 7
INDEXADO EM: 
Scopus 
WOS
Scopus WOS5
TÃTULO: High temperature annealing of rare earth implanted GaN films: Structural and optical properties Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7
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TÃTULO: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, NÚMERO: 7
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, NÚMERO: 7
INDEXADO EM: 
CrossRef
CrossRef7
TÃTULO: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7
INDEXADO EM: CrossRef
CrossRef8
TÃTULO: The atomic structure of defects formed during doping of GaN with rare earth ions Full Text
AUTORES: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLICAÇÃO: 2005, FONTE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, NÚMERO: 3
AUTORES: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLICAÇÃO: 2005, FONTE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, NÚMERO: 3
9
TÃTULO: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy Full Text
AUTORES: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
AUTORES: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
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TÃTULO: Amorphisation of GaN during processing with rare earth ion beams Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
