Eduardo Jorge da Costa Alves
AuthID: R-000-4EK
191
TÃTULO: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTORES: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, NÚMERO: 13
AUTORES: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, NÚMERO: 13
192
TÃTULO: Design of experiments approach on the preparation of dry inhaler chitosan composite formulations by supercritical CO2-assisted spray-drying Full Text
AUTORES: Cabral, RP; Sousa, AML; Silva, AS; Paninho, AI; Temtem, M; Costa, E; Casimiro, T; Aguiar Ricardo, A;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF SUPERCRITICAL FLUIDS, VOLUME: 116
AUTORES: Cabral, RP; Sousa, AML; Silva, AS; Paninho, AI; Temtem, M; Costa, E; Casimiro, T; Aguiar Ricardo, A;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF SUPERCRITICAL FLUIDS, VOLUME: 116
193
TÃTULO: Composition measurement of epitaxial ScxGa1-xN films Full Text
AUTORES: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLICAÇÃO: 2016, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, NÚMERO: 6
AUTORES: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLICAÇÃO: 2016, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, NÚMERO: 6
194
TÃTULO: Functional behaviour of TiO2 films doped with noble metals
AUTORES: Rodrigues, MS; Borges, J; Gabor, C; Munteanu, D; Apreutesei, M; Steyer, P; Lopes, C; Pedrosa, P; Alves, E; Barradas, NP; Cunha, L; Martinez Martinez, D; Vaz, F;
PUBLICAÇÃO: 2016, FONTE: SURFACE ENGINEERING, VOLUME: 32, NÚMERO: 8
AUTORES: Rodrigues, MS; Borges, J; Gabor, C; Munteanu, D; Apreutesei, M; Steyer, P; Lopes, C; Pedrosa, P; Alves, E; Barradas, NP; Cunha, L; Martinez Martinez, D; Vaz, F;
PUBLICAÇÃO: 2016, FONTE: SURFACE ENGINEERING, VOLUME: 32, NÚMERO: 8
195
TÃTULO: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTORES: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 178
AUTORES: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 178
196
TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in alpha-Al2O3 single crystal implanted with Mg ions Full Text
AUTORES: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTORES: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
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TÃTULO: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTORES: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTORES: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
198
TÃTULO: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTORES: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
AUTORES: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
199
TÃTULO: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers Full Text
AUTORES: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 8
AUTORES: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 8
200
TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al<inf>2</inf>O<inf>3</inf> single crystal implanted with Mg ions
AUTORES: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E.;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379
AUTORES: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E.;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379
