Patrick R. Briddon
AuthID: R-006-MRG
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TÃTULO: Tin-vacancy complex in germanium Full Text
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, NÚMERO: 8
AUTORES: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, NÚMERO: 8
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TÃTULO: Electronic structure of Zn, Cu and Ni impurities in germanium Full Text
AUTORES: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, NÚMERO: 6
AUTORES: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, NÚMERO: 6
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TÃTULO: Surface-phosphorus interaction in Si nanocrystals Full Text
AUTORES: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, NÚMERO: 1
AUTORES: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, NÚMERO: 1
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TÃTULO: Radiation-induced defect reactions in tin-doped Ge crystals
AUTORES: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
AUTORES: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
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TÃTULO: Radiation-induced Defect Reactions in Tin-doped Ge Crystals
AUTORES: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
AUTORES: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
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TÃTULO: Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si Full Text
AUTORES: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2010, FONTE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, NÚMERO: 9
AUTORES: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2010, FONTE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, NÚMERO: 9
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TÃTULO: Ab-initio modeling of a-Si and a-Si:H Full Text
AUTORES: Ricardo M Ribeiro; Vitor J B Torres; Mikhail I Vasilevskiy; Andre Barros; Patrick R Briddon;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting Symposium A InN Material and Alloys in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5, VOLUME: 7, NÚMERO: 5
AUTORES: Ricardo M Ribeiro; Vitor J B Torres; Mikhail I Vasilevskiy; Andre Barros; Patrick R Briddon;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting Symposium A InN Material and Alloys in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5, VOLUME: 7, NÚMERO: 5
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TÃTULO: Trivacancy in silicon: A combined DLTS and ab-initio modeling study Full Text
AUTORES: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLICAÇÃO: 2009, FONTE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 23-24
AUTORES: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLICAÇÃO: 2009, FONTE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 23-24
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TÃTULO: Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
AUTORES: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLICAÇÃO: 2009, FONTE: PHYSICAL REVIEW B, VOLUME: 80, NÚMERO: 23
AUTORES: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLICAÇÃO: 2009, FONTE: PHYSICAL REVIEW B, VOLUME: 80, NÚMERO: 23
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TÃTULO: Strained graphene: tight-binding and density functional calculations Full Text
AUTORES: Ribeiro, RM ; Vitor M Pereira ; Peres, NMR ; Briddon, PR; Castro Neto, AH;
PUBLICAÇÃO: 2009, FONTE: NEW JOURNAL OF PHYSICS, VOLUME: 11, NÚMERO: 11
AUTORES: Ribeiro, RM ; Vitor M Pereira ; Peres, NMR ; Briddon, PR; Castro Neto, AH;
PUBLICAÇÃO: 2009, FONTE: NEW JOURNAL OF PHYSICS, VOLUME: 11, NÚMERO: 11
